Cree (Cree) in Japanese companies Sharp Japan (Cree Japan) Fourth GenerationLighting Technology Expo (012 January 18 to 20, Tokyo Big Sight International ExhibitionCenter) on display at the use of newly developedLED chip size than the previous productsmall and high brightness white LED XLamp the XB-D.
XLamp package size of the XB-D 2.45mm x 2.45mm, wireless led lighting, the area is almost half of the Creein the past (3.45mm × 3.45mm). The input current is 350mA when the luminous flux of148lm (junction temperature 25 ° C values) than previous products, 139lm (junction temperature of 25 ° C under value). Even in the junction temperature of 85 ℃ (close tothe actual conditions of temperature) on the LED lighting apparatus, the XLamp XB-Dflux only decreased from 148lm to 130lm. wireless led lighting. This is a from January 2012 to supply products.
Set of V-shaped trench in the substrate of the blue LED chip, LED chips of the newdevelopment to improve the light extraction efficiency of blue LED chips. LED high bay, Cree LED chip family will use the technology known as “DA Chip Family”. Of DA Chip on the SiCsubstrate as a light-emitting layer of GaN semiconductor single-crystal growth, and V-shaped grooves in the SiC substrate on the outside set out from the V-groove side of theluminescence. As the light-emitting layer side of the junction with the package, wireless led lighting, light-emitting light-emitting layer generated heat can be more easily from the package side of the heat, to prevent large input current luminous efficiency decreased.
In addition, Career, Japan also made public the blueprint for the development of whiteLED luminous efficiency. See from the blueprint level of R & D from 2011 to 2012luminous efficiency will reach 231lm / W, wireless led lighting, and put into operation after 2014, the sameefficiency white LED. Just a year ago, the company has publicly luminous efficiencyreach 208lm / W blueprint for product development and mass production.