Germany, OSRAM Opto Semiconductors R & D staff to produce high-performance blue-white LED prototype silicon chip GaN light-emitting material layer is placed in a diameter of 150 mm silicon wafer substrate. This is the first successful use of the silicon wafer substrate to replace the sapphire substrate the production of t8 high bay LED chip, and maintain the same lighting quality and efficiency.
At present, this LED chip has entered the pilot phase, tested under practical conditions. OSRAM is the first silicon wafer t8 high bay LED chip is expected to put on the market within two years.
Silicon wafer substrate chip compared to traditional materials chip has obvious advantages. Wide range of silicon in the semiconductor industry applications, to meet the larger wafer diameter production requirements, while the silicon material has better thermal properties and lower price, the silicon wafer substrate chip will become the future of led high bay lighting market more attractive and the choice of the price advantage.
The report also pointed out that the LED lamps to high-power LED devices manufacturers a great opportunity. In 2016, 60W high-power LED lamps for street and industrial lighting the field will become one of the largest LED lighting market. Power Splitter market when these applications are expected to more than one billion U.S. dollars, mainly from the direct sale to the t8 high bay lighting and commercial power supply manufacturers, power MOSFETs and rectifiers. Jonathon Eykyn, IMS Research market analyst and author of the report, said: “Although some large-scale LED lighting manufacturers have the ability to design and manufacture of power circuit, but they still need to have the power semiconductor industry knowledge and technology.