The high voltage LED lighting and generally the LV LED has three in the technically most important difference, the first open trench (Trench), the purpose of the grooves is N pieces of small units of the PN junction independently from its groove below need to substrate, the depth depending on the epitaxial structure varies, generally about 4 ~ 8um,, the width of the groove aspect although some restrictions, but the groove is too wide to represent the reduction of the effective light emitting region, will affect the luminous efficiency of the high voltage LED lighting need to develop a high aspect ratio process technology, narrowing the line width of the process in order to increase the luminescence efficiency.
The second is a small unit PN crystallization inter-chip interconnect wires (Interconnect). In general, a good link to do a wire jumper requires a relatively flat surface, a deep ladder-like structure will allow the wire structure is weak and prone to damage under high voltage, high current drive, causing the chip failure, so the development of the planarization process becomes very important. The ideal state is to do the insulation layer, the one and deep trench to be flat and interconnection wires can be smoothly connected. In addition, the high voltage LED lighting and low pressure the LV led high bay lighting main difference in the application as it not only can be used in the circuit of constant current (Constant DC) system, can also be an external bridge rectifier, to be applied directly to the exchange environment, very flexibility.