In order to solve the LED Lights heat dissipation problems, the future may be largely vertical structure of the LED structure, promote the technical development of the LED industry. I believe we all are heard, the following only from the technical surface are described, for information on the vertical structure of LED (super led bulbs) technology.
We know that the LED chip (super led bulbs) has two basic structure of the horizontal structure (Lateral) and the vertical structure (Vertical). The horizontal structure of the LED chip, the two electrodes on the same side of the LED chip, the current limit in the n-and p-type layer in the lateral flow, ranging from distance. The two electrodes of the vertical structure of the LED chips on both sides of the LED epitaxial layer, respectively, due to graphical electrode and the p-type cladding layer as the second electrode, the current almost all vertical flow through the LED epitaxial layer, very little lateral flow current can improve the current distribution of the planar structure the problem, improve the luminous efficiency can also solve P shading to enhance the LED light-emitting area.
We start to understand under the vertical structure of the LED manufacturing technology and the basic methods:
Manufacturing vertical structure LED chip technology, there are three main ways:
The growth of GaN films, the use of silicon carbide substrate, the advantage is in the same operating current conditions, the light fades, long life, the shortcomings of the silicon substrate absorbance.
Second, the use of chip bonding and peeling technology manufacturing. The advantage is that the light fades, long life, the deficiencies to be the surface of the LED in order to improve the luminous efficiency.
Is heterogeneous substrates such as silicon substrate GaN LED (super led bulbs) epitaxial layer, the advantage of good heat dissipation and easy processing.
There are two basic ways: Peel the growth substrate, and stripped the growth substrate to create vertical structure LED chip. Which the growth of GaAs growth substrate on the vertical structure of GaP based LED chips have two structures:
Do not peel the conductive GaAs growth substrate: the stacked conductive DBR reflection layer on the conductive GaAs growth substrate, the growth of GaP based LED epitaxial layer on the reflective layer of conductive DBR.
Stripped GaAs growth substrate: Cascading reflective layer on the GaP based LED epitaxial layer bonded to a conductive support substrate, stripping the GaAs substrate. Conductive support substrate, the substrate of gallium arsenide, gallium phosphide substrate, the silicon substrate, metal and alloy.
In addition, the vertical GaN-based LED Grow Lights grown on silicon, there are two structures:
Stripped silicon growth substrates: metal reflective layer stacked on a conductive silicon growth substrate or conductive DBR reflection layer, the growth of GaN-based LED epitaxial layer on the reflective layer in the metal reflective layer or conductive DBR.
Stripping the silicon growth substrate: cascading metal reflective layer on the GaN-based LED epitaxial layer on the metal reflective layer bonded conductive support substrate, stripping the silicon growth substrate.
A brief description of manufacturing a vertical GaN-based LED process: reflective layer stacked on the reflective layer on the GaN-based LED epitaxial layer bonding the conductive support substrate, stripping the sapphire growth substrate. Conductive support substrate including metal and alloy substrate, the silicon substrate.
The GaP-based LEDs, GaN-based LED and ZnO-based LED of this type of through-hole vertical structure of LED compared to traditional structures LED has a large advantage, in particular in:
1, the vertical structure LEDs of all colors: red LED, green LED, blue LED and ultraviolet light the LED can be made through-hole vertical structure LEDs have great application market.
2, all of the manufacturing process in the chip (wafer) level.
3, no need to play the gold wire with the outside world power is linked through-hole vertical structure LED chip package thickness decreased. Therefore, can be used in the manufacture of ultra-thin devices, such as backlight.