New technology for full-color Micro LED production

Recently, a research team from the Hong Kong University of Science and Technology (HKUST) demonstrated a new technology that can utilize the heterogeneous integration of InGaN and AlGaInP semiconductor materials to achieve full-color Micro LED displays.

It is reported that the research team created a Micro LED microdisplay prototype with an ultra-high resolution of 200x80 pixels and 391 pixels per inch. In order to achieve full-color display effects, the team developed a Micro LED array dual-layer display architecture that integrates blue, green and red light. Through a heterogeneous integration approach, the team was able to utilize the high efficiency of InGaN and AlGaInP materials to achieve blue, green and red light emission respectively.

Researchers say the new technology simplifies the manufacturing process compared to existing technologies such as multi-stack wafer bonding or color conversion. Using this technology, the research team successfully displayed full-color images on a microdisplay with a 109% sRGB color gamut and a brightness of 300 nits. The research team stated that by enhancing the pixel driver and optimizing the GaN dual-color epitaxial wafer, the color mixing of the microdisplay can be further improved and a brightness of more than 4,000 nits can be achieved.